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Deposition Table

Deposition Material Table

Deposition Material Table

For choose the best method for deposition of the different materials, it is necessary to have a set of information that, according to the characteristics of the material, expresses the efficiency of each method. In other words, not every material can be deposited in any way. Tables called deposition material tables have been provided to help users of vacuum coating systems to select the best method.

Deposition is a set of processes used to create thin or thick layers of a substance atom-by-atom or molecule by molecule on a solid surface. The created layer deposits as a coating on a surface and changes the properties of the substrate surface depending on the application. The thickness of the deposited layers in this process, depending on the coating method and the type of material, can be in the range of one atom (nanometer) to several millimeters.

Deposition Methods | Vacuum Deposition

Deposition Methods

Key of Symbols

  • RF = RF sputtering is effective
  • RF-R = Reactive RF sputter is effective
  • ✝ Magnetic material (requires special sputter source)
  • * Influenced by composition
  • ** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value.
  • *** All metals alumina coated
  • ‡ One run only
  • TE = thermal evaporation method
  • T. @ V.P. = Temprature (°C) for given vapor pressure (Torr)
  • DC = DC sputtering is effective
  • C = Carbon
  • Gr = Graphite
  • Q = Quartz
  • Incl = Inconel®
  • VitC = Vitreous Carbon
  • SS = Stainless Steel
  • Ex = Excellent
  • G = Good
  • F = Fair
  • P = Poor
  • S = Sublimes
  • PDC = Pulsed DC sputtering
  • DC-R = Reactive DC sputtering is effective
Thermal Evaporators
Sputtering Method

Deposition Material Table

MaterialSymbolMP (°C)S/DDensity (g/cm3)Z-ratioT. @ V.P. 10^-8T. @ V.P. 10^-6 T. @ V.P. 10^-4E-Beam Performance(E-Beam) Liner Material(TE) Boat(TE) Coil(TE) Basket(TE) CrucibleSputterRemarks
AluminumAl660-2.71.086778211,010ExcellentFabmate®, Intermetallic--WTiB2-BN, BNDCAlloys W/Mo/Ta. Flash evap or use BN crucible.
Aluminum AntimonideAlSb1,080-4.3----------RF-
Aluminum ArsenideAlAs1,600-3.7---~1,300------RF-
Aluminum BromideAlBr397-2.64---~50--Mo--Gr--
Aluminum CarbideAl4C3~1,400D2.36---~800Fair-----RF-
Aluminum FluorideAlF31,291S2.88-410490700PoorGraphite, Fabmate®Mo, W, Ta--GrRF-
Aluminum NitrideAlN>2,200S3.26**1.00--~1,750Fair-----RF-RDecomposes. Reactive evap in 10-3 T N2 with glow discharge.
AluminumAl660-2.71.086778211,010ExcellentFabmate®, Intermetallic--WTiB2-BN, BNDCAlloys W/Mo/Ta. Flash evap or use BN crucible.
Aluminum AntimonideAlSb1,080-4.3----------RF-
Aluminum ArsenideAlAs1,600-3.7---~1,300------RF-
Aluminum BromideAlBr397-2.64---~50--Mo--Gr--
Aluminum CarbideAl4C3~1,400D2.36---~800Fair-----RF-
Aluminum FluorideAlF31,291S2.88-410490700PoorGraphite, Fabmate®Mo, W, Ta--GrRF-
Aluminum NitrideAlN>2,200S3.26**1.00--~1,750Fair-----RF-RDecomposes. Reactive evap in 10-3 T N2 with glow discharge.
Aluminum OxideAl2O32,072-3.970.336--1,550ExcellentFabmate®, TungstenW-W-RF-RSapphire excellent in E-beam; forms smooth, hard films.
Aluminum PhosphideAlP2,000-2.42----------RF-
Aluminum, 1% CopperAl/Cu 99/1 wt%640-2.82**1.00---------DCWire feed & flash. Difficult from dual sources.
Aluminum, 1% SiliconAl/Si 99/1 wt %640-2.69**1.00--1,010-----TiB2-BNRF, DCWire feed & flash. Difficult from dual sources.
AntimonySb630S6.680.768279345425Poor-Mo*** Ta***Mo, TaMo, TaBN, C, Al2O3RF, DCEvaporates well.
Antimony OxideSb2O3656S5.2---~300Good----BN, Al2O3RF-RDecomposes on W.
Antimony SelenideSb2Se3611--------Ta--CRFStoichiometry variable.
Antimony SulfideSb2S3550-4.64---~200GoodMolybdenum, TantalumMo, Ta-Mo, TaAl2O3-No decomposition.
Antimony TellurideSb2Te3629-6.5**1.00--600-----CRFDecomposes over 750°C.
ArsenicAs817S5.73-107150210PoorFabmate®C--Al2O3-Sublimes rapidly at low temp.
Arsenic OxideAs2O3312-3.74------------
Arsenic SelenideAs2Se3~360-4.75---------Al2O3, QRF-
Arsenic SulfideAs2S3300-3.43---~400Fair-Mo--Al2O3, QRF-
Arsenic TellurideAs2Te3362-6.5------Flash----See JVST. 1973, 10:748
BariumBa725-3.512.1545627735Fair-W, Ta, MoWWMetalsRFWets without alloying, reacts with ceramics.
Barium ChlorideBaCl2963-3.92---~650--Ta, Mo---RFPreheat gently to outgas.
Barium FluorideBaF21,355S4.890.793--~700GoodMolybdenumMo---RF-
Barium OxideBaO1,918-5.72---~1,300Poor----Al2O3RF, RF-RDecomposes slightly.
Barium SulfideBaS1,200-4.25---1,100--Mo---RF-
Barium TitanateBaTiO31,625D6.020.464---------RFGives Ba. Co-evap and Sputter OK.
BerylliumBe1,278-1.85-7108781,000ExcellentGraphite, Fabmate®W, TaWWCDCWets W/Mo/Ta. Evaporates easily
Beryllium CarbideBe2C>2,100D1.9------------
Beryllium ChlorideBeCl2405-1.9---~150------RF-
Beryllium FluorideBeF2800S1.99---~200Good-------
Beryllium OxideBeO2,530-3.01---1,900Good---W-RF, RF-RNo decomposition from E-beam guns.
BismuthBi271-9.80.79330410520ExcellentFabmate®, GraphiteW, Mo, TaWWAl2O3DCResistivity high. Low Melting Point materials not ideal for sputtering.
Bismuth FluorideBiF3727S5.32---~300-----GrRF-
Bismuth OxideBi2O3860-8.55**1.00--~1,400Poor-----RF, RF-R-
Bismuth SelenideBi2Se3710D6.82**1.00--~650Good----Gr, QRFCo-evap from 2 sources or sputter.
Bismuth SulfideBi2S3685D7.39----------RF-
Bismuth TellurideBi2Te3573-7.7**1.00--~600--W, Mo--Gr, QRFCo-evap from 2 sources or sputter.
Bismuth TitanateBi2Ti2O7870D-----------RFSputter or co-evap from 2 sources in 10-2 Torr O2.
BoronB2,079-2.340.3891,2781,5481,797ExcellentFabmate®, GraphiteC--CRFExplodes with rapid cooling. Forms carbide with container.
Boron CarbideB4C2,350-2.52**1.002,5002,5802,650ExcellentFabmate®, Graphite----RFSimilar to chromium.
Boron NitrideBN~3,000S2.25---~1,600Poor-----RF, RF-RDecomposes when sputtered. Reactive preferred.
Boron OxideB2O3~450-1.81---~1,400GoodMolybdenumMo-----
Boron SulfideB2S3310-1.55---800-----GrRF-
CadmiumCd321-8.640.68264120180Poor-W, Mo, Ta-W, Mo, TaAl2O3, QDC, RFBad for vacuum systems. Low sticking coefficient.
Cadmium AntimonideCd3Sb2456-6.92------------
Cadmium ArsenideCd3As2721-6.21---------QRF-
Cadmium BromideCdBr2567-5.19---~300--------
Cadmium ChlorideCdCl2568-4.05---~400--------
Cadmium FluorideCdF21,100-6.64---~500------RF-
Cadmium IodideCdI2387-5.67---~250--------
Cadmium OxideCdO>1,500D6.95---~530------RF-RDisproportionates.
Cadmium SelenideCdSe>1,350S5.81**1.00--540GoodMolybdenum, TantalumMo, Ta--Al2O3, QRFEvaporates easily.
Cadmium SulfideCdS1,750S4.821.02--550Fair-W, Mo, Ta-WAl2O3, QRFSticking coefficient affected by substrate.
Cadmium TellurideCdTe1,092-5.850.98--450--W, Mo, TaWW, Ta, Mo-RFStoichiometry depends on substrate temp. n~2.6.
CalciumCa839S1.542.62272357459Poor-WWWAl2O3, Q-Corrodes in air.
Calcium FluorideCaF21,423-3.180.775--~1,100--W, Mo, TaW, Mo, TaW, Mo, TaQRFRate control important. Preheat gently to outgas.
Calcium OxideCaO2,614-~3.3---~1,700--W, Mo--ZrO2RF-RForms volatile oxides with W/Mo.
Calcium SilicateCaSiO31,540-2.91----Good----QRF-
Calcium SulfideCaS2,525D2.5---1,100--Mo---RFDecomposes.
Calcium TitanateCaTiO31,975-4.1-1,4901,6001,690Poor-----RFDisproportionates except in sputtering.
Calcium TungstateCaWO41,200-6.06----Good-W---RF-
CarbonC~3,652S1.8–2.13.261,6571,8672,137ExcellentFabmate®, Graphite----PDCE-beam preferred. Arc evaporation. Poor film adhesion.
CeriumCe798-~6.70**1.009701,1501,380Good-W, TaWW, TaAl2O3DC, RF-
Cerium (III) OxideCe2O31,692-6.86----Fair-W----Alloys with source. Use 0.015"–0.020" W boat.
Cerium (IV) OxideCeO2~2,600-7.13**1.001,8902,0002,310GoodTantalum, Graphite, Fabmate®W---RF, RF-RVery little decomposition.
Cerium FluorideCeF31,460-6.16**1.00--~900GoodTungsten, Tantalum, MolybdenumW, Mo, Ta-Mo, Ta-RFPreheat gently to outgas. n~1.7.
CesiumCs28-1.88--162280-----Q--
Cesium BromideCsBr636-3.04---~400--W---RF-
Cesium ChlorideCsCl645-3.99---~500--W---RF-
Cesium FluorideCsF682-4.12---~500--W---RF-
Cesium HydroxideCsOH272-3.68---550--------
Cesium IodideCsI626-4.51---~500--W--QRF-
ChioliteNa5Al3F14735-2.9---~800--Mo, W---RF-
ChromiumCr1,857S7.20.3058379771,157GoodFabmate®, Graphite, TungstenCr Plated W RodsWWVitCDCFilms very adherent. High rates possible.
Chromium BorideCrB1,950-2,050-6.17----------RF-
Chromium (II) BromideCrBr2842-4.36---550------RF-
Chromium CarbideCr3C21,895-6.68---~2,000Fair-W---RF-
Chromium ChlorideCrCl2824-2.88---550--Fe---RF-
Chromium OxideCr2O32,266-5.21**1.00--~2,000Good-W, Mo-W-RF, RF-RDisproportionates to lower oxides; reoxidizes at 600°C in air.
Chromium SilicideCrSi21,490-5.5----------RF-
Chromium-Silicon MonoxideCr-SiO-S*-***Good-W-W-RFFlash evaporate.
Cobalt †Co1,495-8.90.3438509901,200ExcellentDirect in HearthW, Nb-WAl2O3DCAlloys with W/Ta/Mo.
Cobalt BromideCoBr2678D4.91---400------RF-
Cobalt ChlorideCoCl2724D3.36---472------RF-
Cobalt OxideCoO1,795-6.450.412---------DC-R, RF-RSputtering preferred.
CopperCu1,083-8.920.4377278571,017ExcellentGraphite, MolybdenumMoWWAl2O3, Mo, TaDCAdhesion poor. Use interlayer (Cr). Evaporates using any source material.
Copper ChlorideCuCl430-4.14---~600------RF-
Copper OxideCu2O1,235S6**1.00--~600GoodGraphite, Fabmate®, TantalumTa--Al2O3DC-R, RF-R-
Copper SulfideCu2S1,100-5.6------------
CryoliteNa3AlF61,000-2.9-1,0201,2601,480ExcellentFabmate®, TungstenW, Mo, Ta-W, Mo, TaVitCRFLarge chunks reduce spitting. Little decomposition.
DysprosiumDy1,412-8.550.6625750900GoodDirect in HearthTa---DC-
Dysprosium FluorideDyF31,360S----~800Good-Ta---RF-
Dysprosium OxideDy2O32,340-7.81---~1,400------RF, RF-RLoses oxygen.
ErbiumEr1,529S9.070.74650775930GoodTungsten, TantalumW, Ta---DC-
Erbium FluorideErF31,350-7.82---~750--Mo---RFSee JVST. 1985; A3(6):2320.
Erbium OxideEr2O32,350-8.64**1.00--~1,600------RF, RF-RLoses oxygen.
EuropiumEu822S5.24**1.00280360480Fair-W, Ta--Al2O3DCLow Ta solubility.
Europium FluorideEuF21,380-6.5---~950--Mo---RF-
Europium OxideEu2O32,350-7.42---~1,600Good-Ta, W--ThO2RF, RF-RLoses oxygen. Films clear and hard.
Europium SulfideEuS--5.75----Good-----RF-
Gadolinium †Gd1,313-7.90.677609001,175ExcellentDirect in HearthTa--Al2O3DCHigh Ta solubility
Gadolinium CarbideGdC2------1,500-----CRFDecomposes under sputtering.
Gadolinium OxideGd2O32,330-7.41----Fair-----RF, RF-RLoses oxygen.
GalliumGa30-5.9-619742907GoodFabmate®---Al2O3, Q-Alloys with W/Ta/Mo. Use E-beam gun. Low Melting Point materials not ideal for sputtering.
Gallium AntimonideGaSb710-5.6----Fair-W, Ta---RFFlash evaporate.
Gallium ArsenideGaAs1,238-5.3----GoodGraphite, Fabmate®W, Ta--CRFFlash evaporate.
Gallium NitrideGaN800S6.1---~200-----Al2O3RF, RF-REvaporate Ga in 10-3 Torr N2.
Gallium OxideGa2O31,900-6.44------W---RFLoses oxygen.
Gallium PhosphideGaP1,540-4.1--770920--W, Ta-WQRFDoes not decompose. Rate control important.
GermaniumGe937-5.350.5168129571,167ExcellentFabmate®, GraphiteW, C, Ta--Q, Al2O3DCExcellent films from E-beam.
Germanium (II) OxideGeO700S----500-----QRF-
Germanium (III) OxideGeO21,086-6.24---~625GoodFabmate®, Tantalum, MolybdenumTa, Mo-W, MoQ, Al2O3RF-RSimilar to SiO; film predominantly GeO.
Germanium NitrideGe3N2450S5.2---~650------RF-RSputtering preferred.
Germanium TellurideGeTe725-6.2---381--W, Mo-WQ, Al2O3RF-
Glass, Schott® 8329—1,300-2.2----Excellent-----RFEvaporable alkali glass. Melt in air before evaporating.
GoldAu1,064-19.320.3818079471,132ExcellentFabmate®, TungstenW*** Mo*** W--Al2O3, BNDCFilms soft; not very adherent.
HafniumHf2,227-13.310.362,1602,2503,090Good-----DC-
Hafnium BorideHfB23,250-10.5----------DC, RF-
Hafnium CarbideHfC~3,890S12.2**1.00--~2,600------RF-
Hafnium NitrideHfN3,305-13.8**1.00---------RF, RF-R-
Hafnium OxideHfO22,758-9.68**1.00--~2,500FairDirect in Hearth----RF, RF-RFilm HfO.
Hafnium SilicideHfSi21,750-7.2----------RF-
HolmiumHo1,474-8.80.58650770950Good-W, TaWW---
Holmium FluorideHoF31,143-7.68---~800-----QDC, RF-
Holmium OxideHo2O32,370-8.41----------RF, RF-RLoses oxygen.
Inconel®Ni/Cr/Fe1,425-8.5----GoodFabmate®, TungstenWWW-DCUse fine wire wrapped on W. Low rate required for smooth films.
IndiumIn157-7.30.841487597742ExcellentFabmate®, Graphite, MolybdenumW, Mo-WGr, Al2O3DCWets W and Cu. Use Mo liner. Low Melting Point materials not ideal for sputtering.
Indium (I) OxideIn2O~600S6.99---650------RFDecomposes under sputtering.
Indium (III) OxideIn2O3850-7.18**1.00--~1,200Good-W, Pt--Al2O3--
Indium (I) SulfideIn2S653-5.87---650-----GrRF-
Indium (II) SulfideInS692S5.18---650-----GrRF-
Indium (III) SulfideIn2S31,050S4.9---850-----GrRFFilm In2S.
Indium (II) TellurideInTe696-6.29------------
Indium (III) TellurideIn2Te3667-5.78----------RFSputtering preferred; or co-evaporate from 2 sources; flash.
Indium AntimonideInSb535-5.8------W---RFDecomposes. Sputtering preferred; or co-evaporate.
Indium ArsenideInAs943-5.7-780870970--W---RF-
Indium NitrideInN1,200-7------------
Indium PhosphideInP1,070-4.8--630730--W, Ta-W, TaGrRFDeposits are P rich.
Indium SelenideIn2Se3890-5.67----------RFSputtering preferred; or co-evaporate from 2 sources; flash.
Indium Tin OxideIn2O3/SnO2 90/10 wt %1,800S------Fabmate®, Graphite----RF, DC-
IridiumIr2,410-22.420.1291,8502,0802,380Fair-----DC-
Iron †Fe1,535-7.860.3498589981,180ExcellentFabmate®‡WWWAl2O3DCAttacks W. Films hard, smooth. Preheat gently to outgas.
Iron (II) OxideFeO1,369-5.7----Poor-----RF, RF-RDecomposes; sputtering preferred.
Iron (III) OxideFe2O31,565-5.24**1.00---Good-W-W--Disproportionate to Fe3O4 at 1,530°C.
Iron Bromide2-Feb684D4.64---561-----FeRF-
Iron ChlorideFeCl2670S3.16---300-----FeRF-
Iron IodideFeI2--5.32---400-----FeRF-
Iron SulfideFeS1,193D4.74---------Al2O3RFDecomposes
KanthalFeCrAl--7.1------WWW-DC-
LanthanumLa921-6.150.929901,2121,388ExcellentTungsten, TantalumW, Ta--Al2O3RFFilms will burn in air if scraped.
Lanthanum BorideLaB62,210D2.61**1.00---Good-----RF-
Lanthanum BromideLaBr3783-5.06--------Ta-RFHygroscopic.
Lanthanum FluorideLaF31,490S~6.0---900GoodTantalum, MolybdenumTa, Mo-Ta-RFNo decomposition. n~1.6.
Lanthanum OxideLa2O32,307-6.51**1.00--1,400GoodGraphite, Fabmate®, TungstenW, Ta---RFLoses oxygen. n~1.73.
LeadPb328-11.341.13342427497ExcellentFabmate®W, MoWW, TaAl2O3, QDC-
Lead BromidePbBr2373-6.66---~300--------
Lead ChloridePbCl2501-5.85---~325-----Al2O3RFLittle decomposition.
Lead FluoridePbF2855S8.24---~400--W, Mo--BeORF-
Lead IodidePbI2402-6.16---~500-----Q--
Lead OxidePbO886-9.53---~550-----Q, Al2O3RF-RNo decomposition. n~2.6.
Lead SelenidePbSe1,065S8.1---~500--W, Mo-WGr, Al2O3RF-
Lead StannatePbSnO31,115-8.1-670780905Poor----Al2O3RFDisproportionates.
Lead SulfidePbS1,114S7.5---500--W-W, MoQ, Al2O3RFLittle decomposition.
Lead TelluridePbTe917-8.160.6517809101,050--Mo, Pt, Ta--Al2O3, GrRFDeposits are Ta rich. Sputtering preferred.
Lead TitanatePbTiO3--7.521.16-----Ta---RF-
LithiumLi181-0.535.9227307407GoodTantalumTa--Al2O3-Metal reacts quickly in air.
Lithium BromideLiBr550-3.46---~500--Ni---RF-
Lithium ChlorideLiCl605-2.07---400--Ni---RFPreheat gently to outgas.
Lithium FluorideLiF845-2.640.7788751,0201,180GoodTantalum, Tungsten, MolybdenumNi, Ta, Mo, W--Al2O3RFRate control important for optical films. Preheat gently to outgas.
Lithium IodideLiI449-4.08---400--Mo, W---RF-
Lithium NiobateLiNbO3---0.463-----------
Lithium OxideLi2O>1,700-2.01---850------RF-
LutetiumLu1,663-9.84---1,300ExcellentDirect in HearthTa--Al2O3RF, DC-
Lutetium OxideLu2O3--9.42---1,400------RFDecomposes.
MagnesiumMg649S1.741.61185247327GoodFabmate®, Graphite, TungstenW, Mo, Ta, CbWWAl2O3DCExtremely high rates possible.
Magnesium AluminateMgAl2O42,135-3.6----Good-----RFNatural spinel.
Magnesium BromideMgBr2700-3.72---~450--Ni---RFDecomposes.
Magnesium ChlorideMgCl2714-2.32---400--Ni---RFDecomposes.
Magnesium FluorideMgF21,261-2.9–3.20.637--1,000ExcellentFabmate®, Graphite, MolybdenumMo, Ta--Al2O3RFSubstrate temp and rate control important. Reacts with W. Mo OK.
Magnesium IodideMgI2<637D4.43---200------RF-
Magnesium OxideMgO2,852-3.580.411--1,300GoodFabmate®, Graphite---C, Al2O3RF, RF-REvaporates in 10-3 Torr O2 for stoichiometry.
ManganeseMn1,244S7.20.377507572647GoodTungstenW, Ta, MoWWAl2O3DC-
Manganese (II) OxideMnO1945-5.37------------
Manganese (III) OxideMn2O31,080-4.50.467-----------
Manganese (IV) OxideMnO2535-5.03----Poor-W-W-RF-RLoses oxygen at 535°C.
Manganese BromideMnBr2-D4.39---500------RF-
Manganese ChlorideMnCl2650-2.98---450------RF-
Manganese SulfideMnS-D3.99---1,300--Mo---RFDecomposes.
MercuryHg-39-13.55--68-42-6--------
Mercury SulfideHgS584S8.1---250-----Al2O3RFDecomposes.
MolybdenumMo2,617-10.20.2571,5921,8222,117ExcellentFabmate®, Graphite----DCFilms smooth, hard. Careful degas required.
Molybdenum BorideMoB22,100-7.12----Poor-----RF-
Molybdenum CarbideMo2C2,687-8.9**1.00---Fair-----RFEvaporation of Mo(CO)6 yields Mo2C.
Molybdenum SulfideMoS21,185-4.8**1.00--~50------RF-
Molybdenum OxideMoO3795S4.69**1.00--~900--Mo-MoAl2O3, BNRFSlight oxygen loss.
Molybdenum SilicideMoSi22,050-6.31**1.00-----W---RFDecomposes.
NeodymiumNd1,021-7.01**1.007318711,062ExcellentTantalumTa--Al2O3DCLow W solubility.
Neodymium FluorideNdF31,410-6.5---~900GoodTungsten, MolybdenumMo, W-Mo, TaAl2O3RFVery little decomposition.
Neodymium OxideNd2O3~1,900-7.24---~1,400GoodTantalum, TungstenTa, W--ThO2RF, RF-RLoses oxygen; films clear. E-beam preferred.
Nichrome IV® †Ni/Cr1,395-8.5**1.008479871,217ExcellentFabmate®***WW, TaAl2O3DCAlloys with W/Ta/Mo.
Nickel †Ni1,453-8.90.3319271,0721,262ExcellentFabmate®‡W***--Al2O3DCAlloys with W/Ta/Mo. Smooth adherent films.
Nickel BromideNiBr2963S5.1---362------RF-
Nickel ChlorideNiCl21,001S3.55---444------RF-
Nickel OxideNiO1,984-6.67**1.00--~1,470-----Al2O3RF-RDissociates on heating.
Nickel/Iron †Ni/Fe---**1.00----Fabmate®‡,------
Nimendium †Ni3%Mn1,425-8.8----------DC-
NiobiumNb2,468-8.570.4921,7281,9772,287ExcellentFabmate®----DCAttacks W source.
Niobium (II) OxideNbO--7.3---1,100------RF-
Niobium (III) OxideNb2O31,780-7.5------W-W-RF, RF-R-
Niobium (V) OxideNb2O51,485-4.47**1.00-----W-W-RF, RF-R-
Niobium BorideNbB22,900-6.97----------RF-
Niobium CarbideNbC3,500-7.6**1.00---Fair-----RF-
Niobium NitrideNbN2,573-8.4**1.00---------RF, RF-RReactive. Evaporates Nb in 10-3 Torr N2.
Niobium TellurideNbTe2--7.6----------RFComposition variable.
Niobium-TinNb3Sn-------Excellent-----DCCo-evaporate from 2 sources.
OsmiumOs3,045-22.48-2,1702,4302,760Fair-----DC-
Osmium OxideOs2O3-D------------Deposits Os in 10-3 Torr O2.
PalladiumPd1,554S12.020.3578429921,192ExcellentFabmate®, Graphite, TungstenW***WWAl2O3DCAlloys with refractory metals.
Palladium OxidePdO870-9.7---575-----Al2O3RF-RDecomposes.
ParyleneC8H8300–400-1.1-----------Vapor-depositable plastic.
Permalloy® †Ni/Fe/Mo/Mn1,395-8.7**1.009471,0471,307GoodFabmate®‡W--Al2O3DCFilm low in Ni.
PhosphorusP44.1-1.82-327361402-----Al2O3-Material reacts violently in air.
Phosphorus NitrideP3N5--2.51----------RF, RF-R-
PlatinumPt1,772-21.450.2451,2921,4921,747ExcellentFabmate®, GraphiteWWWCDCAlloys with metals. Films soft, poor adhesion.
Platinum OxidePtO2450-10.2----------RF-RE-beam preferred for evaporation.
PlutoniumPu641-19.84------W-----
PoloniumPo254-9.4-117170244-----Q--
PotassiumK63-0.86-2360125--Mo--Q-Metal reacts rapidly in air. Preheat gently to outgas.
Potassium BromideKBr734-2.75---~450--Ta, Mo--QRFPreheat gently to outgas.
Potassium ChlorideKCl770S1.98---510GoodTantalumTa, Ni---RFPreheat gently to outgas.
Potassium FluorideKF858-2.48---~500-----QRFPreheat gently to outgas.
Potassium HydroxideKOH360-2.04---~400-------Preheat gently to outgas.
Potassium IodideKI681-3.13---~500--Ta---RFPreheat gently to outgas.
PraseodymiumPr931-6.77**1.008009501,150Good-Ta---DC-
Praseodymium OxidePr2O3-D7.07---1,400Good----ThO2RF, RF-RLoses oxygen.
PTFEPTFE330-2.9------W---RFBaffled source. Film structure doubtful.
RadiumRa700-5 (?)-246320416--------
RheniumRe3,180-20.530.151,9282,2072,571Poor-----DC-
Rhenium OxideReO3-D~7----------RFEvaporate Re in 10-3 Torr O2.
RhodiumRh1,966-12.40.211,2771,4721,707GoodFabmate®, TungstenWWWThO2, VitCDCE-beam gun preferred.
RubidiumRb39-1.48--337111-----Q--
Rubidium ChlorideRbCl718-2.09---~550-----QRF-
Rubidium IodideRbI647-3.55---~400-----QRF-
RutheniumRu2,310-12.30.1821,7801,9902,260Poor-----DC-
SamariumSm1,074-7.520.89373460573Good-Ta--Al2O3DC-
Samarium OxideSm2O32,350-8.35----Good----ThO2RF, RF-RLoses oxygen. Films smooth, clear.
Samarium SulfideSm2S31,900-5.73----Good-------
ScandiumSc1,541-2.990.917148371,002ExcellentTungsten, MolybdenumW--Al2O3RFAlloys with Ta.
Scandium OxideSc2O32,300-3.86---~400Fair-----RF, RF-R-
SeleniumSe217-4.810.86489125170GoodFabmate®, Tungsten, MolybdenumW, MoW, MoW, MoAl2O3-Bad for vacuum systems. High V.P. Low Melting Point materials not ideal for sputtering.
SiliconSi1,410-2.320.7129921,1471,337FairFabmate®‡, Tantalum----RFAlloys with W; use heavy W boat. SiO produced.
Silicon (II) OxideSiO>1,702S2.130.87--850FairFabmate®, Tungsten, TantalumTaWWTaRF, RF-RFor resistance evaporation, use baffle box and low rate.
Silicon (IV) OxideSiO21,610-~2.65**1.00**1,025*ExcellentFabmate®, Graphite, Tantalum---Al2O3RFQuartz excellent in E-beam.
Silicon (N-type)Si (N-type)1,410-2.320.7129921,1471,337FairFabmate®‡, Tantalum----DC, RF-
Silicon (P-type)Si (P-type)1,410-2.320.7129921,1471,337FairFabmate®‡, Tantalum----DC, RF-
Silicon BorideSiB6-------Poor-----RF-
Silicon CarbideSiC~2,700S, D3.22**1.00--1,000------RFSputtering preferred.
Silicon NitrideSi3N41,900-3.44**1.00--~800------RF, RF-R-
Silicon SelenideSiSe------550-----QRF-
Silicon SulfideSiS940S1.85---450-----QRF-
Silicon TellurideSiTe2--4.39---550-----QRF-
SilverAg962-10.50.5298479581,105ExcellentFabmate®, Tungsten, Molybdenum, TantalumWMoTa, MoAl2O3, WDC-
Silver BromideAgBr432D6.47---~380--Ta--QRF-
Silver ChlorideAgCl455-5.56---~520--Mo-MoQRF-
Silver IodideAgI558-6.01---~500--Ta---RF-
SodiumNa98-0.97-74124192--Ta--Q-Preheat gently to outgas. Metal reacts quickly in air.
Sodium BromideNaBr747-3.2---~400-----QRFPreheat gently to outgas.
Sodium ChlorideNaCl801-2.17---530Good-Ta, W, Mo--QRFCopper oven; little decomposition. Preheat gently to outgas.
Sodium CyanideNaCN564-----~550------RFPreheat gently to outgas.
Sodium FluorideNaF993-2.56---~1,000GoodTungsten, Fabmate®Mo, Ta, W--BeORFPreheat gently to outgas. No decomposition.
Sodium HydroxideNaOH318-2.13---~470-------Preheat gently to outgas.
SpinelMgAI2O4--8----Good-----RF-
StrontiumSr769-2.6**1.00239309403Poor-W, Ta, MoWWVitCRFWets but does not alloy with W/Ta/Mo. May react in air.
Strontium ChlorideSrCl2875-3.05------------
Strontium FluorideSrF21,473-4.24---~1,000-----Al2O3RF-
Strontium OxideSrO2,430S4.7---1,500--Mo--Al2O3RFReacts with W/Mo.
Strontium SulfideSrS>2,000-3.7------Mo---RFDecomposes.
Strontium TitanateSrTiO3---0.31-----------
SulfurS113-2.07-131957Poor-W-WQ-Bad for vacuum systems.
Supermalloy® †Ni/Fe/Mo1,410-8.9----GoodFabmate®‡,----DCSputtering preferred; or co-evaporate from 2 sources-Ni/Fe and Mo.
TantalumTa2,996-16.60.2621,9602,2402,590ExcellentFabmate®, Graphite----DCForms good films.
Tantalum BorideTaB23,000(?)-11.15----------RF-
Tantalum CarbideTaC3,880-13.9**1.00--~2,500------RF-
Tantalum NitrideTaN3,360-16.3**1.00---------RF, RF-REvaporate Ta in 10-3 Torr N2.
Tantalum PentoxideTa2O51,872-8.20.31,5501,7801,920GoodFabmate®, TantalumTaWWVitCRF, RF-RSlight decomposition. Evaporate Ta in 10-3 Torr O2.
Tantalum SulfideTaS2>1,300------------RF-
TechnetiumTc2,200-11.5-1,5701,8002,090--------
TelluriumTe449-6.250.9157207277PoorFabmate®W, TaWW, TaAl2O3, QRFWets without alloying.
TerbiumTb1,356-8.230.668009501,150ExcellentGraphite, Fabmate®, TantalumTa--Al2O3RF-
Terbium FluorideTbF31,172-----~800------RF-
Terbium OxideTb2O32,387-7.87---1,300------RFPartially decomposes.
Terbium PeroxideTb4O7-D-------Ta---RFFilms TbO.
ThalliumTl304-11.85-280360470PoorFabmate®W, Ta-WAl2O3, QDCWets freely.
Thallium BromideTlBr480S7.56---~250--Ta--QRF-
Thallium ChlorideTlCl430S7---~150--Ta--QRF-
Thallium IodideTlI440S7.1---~250-----QRF-
Thallium OxideTl2O2717-10.19---350------RFDisproportionates at 850°C to Tl2O.
ThoriumTh1,750-11.7-1,4301,6601,925ExcellentMolybdenum, Tantalum, TungstenW, Ta, MoWW---
Thorium BromideThBr4610S5.67------Mo-----
Thorium CarbideThC22,655-8.96---~2,300-----CRF-
Thorium FluorideThF4>900-6.32---~750Fair-Mo-WVitCRF-
Thorium OxideThO23,220-9.86---~2,100GoodTungsten----RF, RF-R-
Thorium OxyfluorideThOF2900-9.1------Mo, Ta-----
Thorium SulfideThS21,925-7.3----------RFSputtering preferred; or co-evaporate from 2 sources.
ThuliumTm1,545S9.32-461554680Good-Ta--Al2O3DC-
Thulium OxideTm2O3--8.9---1,500------RFDecomposes.
TinSn232-7.280.724682807997ExcellentFabmate®, TantalumMoWWAl2O3DCWets Mo low sputter power. Use Ta liner in E-beam guns. Low Melting Point materials not ideal for sputtering.
Tin OxideSnO21,630S6.95**1.00--~1,000Excellent-WWWQ, Al2O3RF, RF-RFilms from W are oxygen deficient; oxidize in air.
Tin SelenideSnSe861-6.18---~400Good----QRF-
Tin SulfideSnS882-5.22---~450-----QRF-
Tin TellurideSnTe780D6.48---~450-----QRF-
TitaniumTi1,660-4.50.6281,0671,2351,453ExcellentFabmate®W--TiCDCAlloys with W/Ta/Mo; evolves gas on first heating.
Titanium (II) OxideTiO1,750-4.93**1.00--~1,500GoodFabmate®, TantalumW, Mo--VitCRFPreheat gently to outgas.
Titanium (III) OxideTi2O32,130D4.6----GoodFabmate®, TantalumW---RFDecomposes.
Titanium (IV) OxideTiO21,830-4.260.4--~1,300FairFabmate®, TantalumW, Mo-W-RF, RF-RSuboxide, must be reoxidized to rutile. Ta reduces TiO2 to TiO and Ti.
Titanium BorideTiB22,900-4.5**1.00---Poor-----RF-
Titanium CarbideTiC3,140-4.93**1.00--~2,300------RF-
Titanium NitrideTiN2,930-5.22**1.00---GoodMolybdenumMo---RF, RF-RSputtering preferred. Decomposes with thermal evaporation.
TungstenW3,410-19.350.1632,1172,4072,757GoodDirect in Hearth----DCForms volatile oxides. Films hard and adherent.
Tungsten BorideWB2~2,900-10.77----Poor-----RF-
Tungsten CarbideWC2,860-17.150.1511,4801,7202,120ExcellentGraphite, Fabmate®C---RF-
Tungsten DisulfideWS21,250D7.5**1.00---------RF-
Tungsten OxideWO31,473S7.16**1.00--980GoodTungstenW---RF-RPreheat gently to outgas. W reduces oxide slightly.
Tungsten SelenideWSe2--9----------RF-
Tungsten SilicideWSi2>900-9.4**1.00---------RF-
Tungsten TellurideWTe2--9.49---------QRF-
UraniumU1,132-19.05-1,1321,3271,582Good-Mo, WWW--Films oxidize.
Uranium (II) SulfideUS>2,000-10.87------------
Uranium (III) OxideU2O31,300D8.3------W-W-RF-RDisproportionates at 1,300°C to UO2.
Uranium (IV) OxideUO22,878-10.96------W-W-RFTa causes decomposition.
Uranium (IV) SulfideUS2>1,100-7.96------W---RFSlight decomposition.
Uranium CarbideUC22,350-11.28---2,100-----CRFDecomposes.
Uranium FluorideUF4960-6.7---300--Ni---RF-
Uranium PhosphideUP2--8.57---1,200--Ta---RFDecomposes.
VanadiumV1,890-5.960.531,1621,3321,547ExcellentTungstenW, Mo---DCWets Mo. E-beam-evaporated films preferred.
Vanadium (IV) OxideVO21,967S4.34---~575------RF, RF-RSputtering preferred.
Vanadium (V) OxideV2O5690D3.36**1.00--~500-----QRF-
Vanadium BorideVB22,400-5.1----------RF-
Vanadium CarbideVC2,810-5.77**1.00--~1,800------RF-
Vanadium NitrideVN2,320-6.13----------RF, RF-R-
Vanadium SilicideVSi21,700-4.42----------RF-
YtterbiumYb819S6.961.13520590690GoodTantalumTa-----
Ytterbium FluorideYbF31,157-----~800-Tantalum, MolybdenumMo---RF-
Ytterbium OxideYb2O32,346S9.17**1.00--~1,500------RF, RF-RLoses oxygen.
YttriumY1,522-4.470.8358309731,157ExcellentTungstenW, TaWWAl2O3RF, DCHigh Ta solubility.
Yttrium Aluminum OxideY3Al5O121,990------Good--WW-RFFilms not ferroelectric.
Yttrium FluorideYF31,387-4.01-----Tantalum, Molybdenum----RF-
Yttrium OxideY2O32,410-5.01**1.00--~2,000GoodFabmate®, Graphite, TungstenW--CRF, RF-RLoses oxygen; films smooth and clear.
ZincZn420-7.140.514127177250ExcellentFabmate®, Graphite, TungstenMo, W, TaWWAl2O3, QDCEvaporates well under wide range of conditions.
Zinc AntimonideZn3Sb2570-6.33----------RF-
Zinc BromideZnBr2394-4.2---~300--W--CRFDecomposes.
Zinc FluorideZnF2872-4.95---~800--Ta--QRF-
Zinc NitrideZn3N2--6.22------Mo---RFDecomposes.
Zinc OxideZnO1,975-5.610.556--~1,800Fair-----RF-R-
Zinc SelenideZnSe>1,100-5.420.722--660-Tantalum, MolybdenumTa, W, MoW, MoW, MoQRFPreheat gently to outgas. Evaporates well.
Zinc SulfideZnS1,700S3.980.775--~800GoodTantalum, MolybdenumTa, Mo---RFPreheat gently to outgas. Films partially decompose. n=2.356.
Zinc TellurideZnTe1,239-6.340.77--~600--Mo, Ta---RFPreheat gently to outgas.
ZirconiumZr1,852-6.490.61,4771,7021,987Excellent-W---DCAlloys with W. Films oxidize readily.
Zirconium BorideZrB2~3,200-6.09----Good-----RF-
Zirconium CarbideZrC3,540-6.730.264--~2,500------RF-
Zirconium NitrideZrN2,980-7.09**1.00---------RF, RF-RReactively evaporate in 10-3 Torr N2.
Zirconium OxideZrO2~2,700-5.89**1.00--~2,200GoodGraphite, TungstenW---RF, RF-RFilms oxygen deficient, clear and hard.
Zirconium SilicateZrSiO42,550-4.56----------RF-
Zirconium SilicideZrSi21,700-4.88----------RF-
Reference:www.lesker.com
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