Balanced and Unbalanced Magnetron Sputtering
[vc_row][vc_column width="3/4"][vc_row_inner][vc_column_inner][vc_column_text] Balanced and Unbalanced Magnetron Sputtering Sputtering was first introduced in 1852 and was used by a person named Groe. He could using an electrical discharge deposited the metal film on a cold cathode. At first, sputtering was used for deposition of the refractory metals film, whose deposition was not possible by thermal evaporation, but gradually, using radio frequency waves (RF Sputtering), the possibility of dielectric films was also provided by the sputtering deposition method. [/vc_column_text][/vc_column_inner][/vc_row_inner][vc_row_inner][vc_column_inner][vc_video link="https://www.youtube.com/watch?v=R-oNxgmgbJg" el_width="70" align="center" css=".vc_custom_1655790778214{border-radius: 2px !important;}"][vc_column_text css=".vc_custom_1655790224831{margin-top: -20px !important;}"] Gencoa Circular FFE Magnetron [/vc_column_text][/vc_column_inner][/vc_row_inner][vc_separator][vc_row_inner][vc_column_inner][vc_column_text] Sputtering is in fact the process of transferring the momentum of the particles (usually the ions of neutral gases) to the surface of the target. Parameters such as energy, angles, and masses of the incident particles, as well as the binding energy between atoms, affect its efficiency.…